1- /2-Transistor SRAM Technology Demonstrated at Standard FinFET Process Technology Sunnyvale, CA, December 5, 2018 – Zeno Semiconductor, a Silicon Catalyst Portfolio Company, demonstrated the scalability of its novel 1-transistor/2-transistor Bi-SRAM (bi-stable, intrinsic bipolar) memory technology to FinFET technology node at the IEDM Conference. The results from 14nm and 16nm FinFET technology nodes from multiple foundries follow previous implementation of Bi-SRAM technol

Zeno Claims Double the Drive, No Extra Leakage You may remember that, early this year, we took a look at a 1-transistor (1T) SRAM bit cell. (Yes, new memory stuff seems all the rage lately – and we’re probably not done yet.) Well, there’s another story evolving out of that 1T cell, only it’s not related to memory. It’s related to one of the most fundamental devices in our toolkits: the transistor itself. Zeno claims that they can boost the drive current of an ON transistor by

EE Times, 9/14/2016 00:01 AM EDT LAKE WALES, Fla. — Researchers at Zvi OrBach's startup Zeno Semiconductor (Sunnyvale, Calif.) are claiming a power-boosting breakthrough for use at any semiconductor node to increase drive by 2X and power-delay by 4X, compared with the average 30 percent improvement when advancing to the next Moore's node. Their process is but one example of the future of semiconductors, now that the International Technology Roadmap for Semiconductors (ITRS 20