Zeno Claims Double the Drive, No Extra Leakage You may remember that, early this year, we took a look at a 1-transistor (1T) SRAM bit cell. (Yes, new memory stuff seems all the rage lately – and we’re probably not done yet.) Well, there’s another story evolving out of that 1T cell, only it’s not related to memory. It’s related to one of the most fundamental devices in our toolkits: the transistor itself. Zeno claims that they can boost the drive current of an ON transistor by

EE Times, 9/14/2016 00:01 AM EDT LAKE WALES, Fla. — Researchers at Zvi OrBach's startup Zeno Semiconductor (Sunnyvale, Calif.) are claiming a power-boosting breakthrough for use at any semiconductor node to increase drive by 2X and power-delay by 4X, compared with the average 30 percent improvement when advancing to the next Moore's node. Their process is but one example of the future of semiconductors, now that the International Technology Roadmap for Semiconductors (ITRS 20

Novel 1-Transistor SRAM Technology 5x Smaller and Lower Power than Conventional SRAM Demonstrated at 28nm Process Technology Sunnyvale, CA, December 10, 2015 – Zeno Semiconductor today announced its novel 1-transistor Bi-SRAM (bi-stable, intrinsic bipolar) memory technology at the IEDM Conference. Zeno’s 1-transistor Bi-SRAM uses a single transistor as the memory bitcell and is therefore 5x smaller than conventional SRAMs which use 6-transistor bitcells (6T-SRAM). When impl

As we are celebrating 50th anniversary of Moore's Law, we are excited to present the details of the 1T-SRAM memory technology at the IEDM 2015 conference in Washington, DC. Our 1T-SRAM memory technology provides a 5x smaller cell size compared to the conventional 6T-SRAM, promising to provide an alternative scaling method beyond Moore's Law. The paper is titled "A Novel Bi-stable 1-Transistor SRAM for High Density Embedded Application" and is a result of the collaborative wor