Zeno Claims Double the Drive, No Extra Leakage
You may remember that, early this year, we took a look at a 1-transistor (1T) SRAM bit cell. (Yes, new memory stuff seems all the rage lately – and we’re probably not done yet.) Well, there’s another story evolving out of that 1T cell, only it’s not related to memory. It’s related to one of the most fundamental devices in our toolkits: the transistor itself. Zeno claims that they can boost the drive current of an ON transistor by two times – something that would ordinarily take several process nodes to achieve. And all without increasing leakage – something several process nodes would not likely be able to provide.
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