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October 10, 2016

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1- /2-Transistor SRAM Technology Demonstrated at Standard FinFET Process Technology

Sunnyvale, CA, December 5, 2018 – Zeno Semiconductor, a Silicon Cat...

Zeno Demonstrates Scalability of World’s Smallest SRAM Bitcell Technology to FinFET Technology Node at IEDM Conference

December 5, 2018

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A Boosted MOS Transistor

October 10, 2016

Zeno Claims Double the Drive, No Extra Leakage

 

 

You may remember that, early this year, we took a look at a 1-transistor (1T) SRAM bit cell. (Yes, new memory stuff seems all the rage lately – and we’re probably not done yet.) Well, there’s another story evolving out of that 1T cell, only it’s not related to memory. It’s related to one of the most fundamental devices in our toolkits: the transistor itself. Zeno claims that they can boost the drive current of an ON transistor by two times – something that would ordinarily take several process nodes to achieve. And all without increasing leakage – something several process nodes would not likely be able to provide.

 

Read more on EE Journal site.

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